TECHNOLOGICAL FEATURES OF THE FORMATION OF SILICON PIEZORESISTIVE ACCELEROMETRS WITH EXTENDED TEMPERATURE RANGE OF MEASURES

Abdullin Farkhad Anvyarovich, design engineer, Scientific-research Institute of physical measurements (8/10 Volodarskogo street, Penza, Russia), farhad_58@mail.ru
Pautkin Valeriy Evgen'evich, candidate of technical sciences, chief specialist, Scientific-research Institute of physical measurements (8/10 Volodarskogo street, Penza, Russia), info@niifi.ru

681.586'325'773

Background. Considers silicon piezoresistive MEMS accelerometers, their advantages and disadvantages. The object of research is the design of sensing elements (SE) piezoresistive MEMS sensor. The aim of the work is the analysis of the technological features of formation of SE silicon piezoresistive accelerometers.
Materials and methods. A systematic approach to the consideration of technological features and materials in the formation of Jae piezoresistive accelerometers.
Results. Provided the use in constructions SE new materials and structures, such as silicon carbide and «silicon insulator-silicon» as well as the use of the measuring circuit from polysilicon.
Conclusions. The use of the options proposed structural and technological solutions will create a micromechanical accelerometer with improved output parameters.

micromechanical accelerometer, piezoresistive accelerometer sensor, monocristall silicon, polysilicon, MEMS technology.